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Samsung 3nm process promises 50 percent cut in power consumption

Posted on Wednesday, May 15 2019 @ 10:41:18 CEST by

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Samsung revealed its 3nm (3GAE) process will offer a 45 percent reduction in area and a 50 percent cut in power consumption or 35 percent higher performance.

This node is expected to be ready for volume production in late 2021 and will likely be on the market at the same time as Intel's 7nm. The 3nm process from Samsung will use a gate-all-around (GAA) transistor design it calls Multi-Bridge Channel Field Effect Transistor (MBCFET). Instead of the nanowires used by GAAFETs, the Samsung design will use nanosheets to simplify production.

Tom's Hardware writer witeken points out on Twitter that Intel promises a 20 percent improvement in performance per Watt for 7nm, but speculates Intel's 7nm may actually have a slightly better transistor density than Samsung's 3nm node.

The first customer tape-outs on 3nm are expected in 2020. Samsung claims designs made for its upcoming 4nm will easily migrate to 3nm.



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