In a new article, IEEE Spectrum discusses nanosheet transistors, a new technology that will be the next (and perhaps the last) step in Moore's Law. Nanosheet transistors are expected to make their debut on the 3nm process as early as 2021. Also called gate-all-around transistors, this new type of transistor uses multiple stacks of silicon that are completely surrounding by the transistor gate. The new design promises to reduce power leakage and to boost the amount of current that a device can drive.
Full details over here.
All in all, stacking nanosheets appears to be the best way possible to construct future transistors. Chipmakers are already confident enough in the technology to put it on their road maps for the very near future. And with the integration of high-mobility semiconductor materials, nanosheet transistors could well carry us as far into the future as anyone can now foresee.