Samsung 3nm now promises 65 percent cut in power consumption

At an industry event, Samsung shared fresh details about its process technology. Wikichip's David Schor was there and he reports on Twitter that Samsung shared impressive performance figures fr its 3nm 3GAE (gate-all-around) process.

The South Korean tech giant now predicts that 3GAE will offer over 65 percent lower power consumption or 40 percent higher performance than its 7LPP node. The process also offers 2.5x the density versus the latter.

It seems Samsung has been able to made substantial enhancements as the company previously talked about a 50 percent power consumption cut or 35 percent higher performance, and an area reduction of just 45 percent.

The 3GAE process from Samsung is expected to hit risk production in 2021 before entering mass production in 2022. If Samsung can deliver on its promises, this new process may be on-par with Intel's 7nm in terms of density.

So they have done additional improvements? Earlier claims were -45% area, 50% power and 35% performance. pic.twitter.com/37yIkKoqqP

— witeken (@witeken) October 14, 2019