5LPE enhances the use of extreme ultraviolet (EUV) lithography tools when compared to 7LPP in a bid to provide a 10% performance improvement (at the same power and complexity) or a 20% power reduction (at the same clocks and complexity) along with a ~25% area reduction (1.33x transistor density depending on exact transistor structures). 5LPE adds several new modules to the original process, including FinFETs with Smart Diffusion Break (SDB) isolation structure for extra performance, first-gen flexible contact placement (Samsung's tech that's similar to Intel's COAG, contact over active gate) for scaling, and single-fin devices for low-power applications.
Samsung foundry now mass producing 5nm LPE chips
Posted on Monday, November 02 2020 @ 13:54 CET by Thomas De Maesschalck