Elpida today announced the shipment of 80 nm-based 2 Gigabit DDR2 SDRAM samples. These samples are among the first 80 nm-based devices in the world to be shipped for customer evaluation, and the devices are expected to be used first in high-density memory modules for high performance servers.
The 2 Gigabit DDR2 SDRAM devices are available in three different data rate speeds: 533 Mega bits per second (Mbps), 667 Mbps, or 800 Mbps. They are organized as either 64 M words x 4 bits x 8 banks or as 32 M words x 8 bits x 8 banks. The supply voltage (VDD) is 1.8V+/-0.1V, and the operating temperature range (Tc) is 0-85 degrees C. The devices are available in 68-ball FBGA packages for easy mounting on Dual In-line Memory Modules (DIMMs).
Products: EDE2104AASE-8G-E (DDR2-800),
Process: 80 nm (ArF scanner adoption)
Organization : 64 M words x 4 bits x 8 banks
32 M words x 8 bits x 8 banks
Supply voltage(VDD) : 1.8V+/-0.1V
Data Rate : 800 Mbps, 667 Mbps, 533 Mbps
Operating temperature range : Tc = 0-85 degrees C
Package : 68-ball FBGA
Elpida's 2 Gigabit DDR2 SDRAM devices are currently available to customers as samples and volume production will begin in accordance with market demand.