Posted on Wednesday, February 08 2006 @ 0:00 CET by Thomas De Maesschalck
Toshiba and NEC have developed a magnetoresistive random access memory (MRAM) that combines the highest density with the fastest read and write speed ever achieved.
he new MRAM achieves a 16-megabit density and a read and write speed of 200-megabytes a second, and also secures a low voltage operation of 1.8V, according to the companies.
A major challenge of MRAM development to date has been the acceleration of read speeds, stated Toshiba and NEC, adding that the current drive circuit used to generate the magnetic field for writing degrades read operation from memory cells. The new MRAM has a circuit design that divides the current paths for reading and writing, realizing a faster read speed, claimed the companies, adding that the circuit also reduces equivalent resistance in wiring by approximately 38% by forking the write current.
More details at
DigiTimes.
