Intel and Micron working on 5x faster flash memory

Posted on Friday, February 01 2008 @ 18:19 CET by Thomas De Maesschalck

In the second half of 2008 Micron and Intel will release a new type of flash memory that will have read speeds of up to 200MB/s and write speeds of 100MB/s.

The new technology – developed jointly by Intel and Micron and manufactured by the companies’ NAND flash joint venture, IM Flash Technologies (IMFT) – is five times faster than conventional NAND, allowing data to be transferred in a fraction of the time for computing, video, photography and other computing applications.

The new high speed NAND can reach speeds up to 200 megabytes per second (MB/s) for reading data and 100 MB/s for writing data, achieved by leveraging the new ONFI 2.0 specification and a four-plane architecture with higher clock speeds. In comparison, conventional single level cell NAND is limited to 40 MB/s for reading data and less than 20 MB/s for writing data.

About the Author

Thomas De Maesschalck

Thomas has been messing with computer since early childhood and firmly believes the Internet is the best thing since sliced bread. Enjoys playing with new tech, is fascinated by science, and passionate about financial markets. When not behind a computer, he can be found with running shoes on or lifting heavy weights in the weight room.

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