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Intel and Micron working on 5x faster flash memory

Posted on Friday, February 01 2008 @ 18:19:10 CET by


In the second half of 2008 Micron and Intel will release a new type of flash memory that will have read speeds of up to 200MB/s and write speeds of 100MB/s.

The new technology – developed jointly by Intel and Micron and manufactured by the companies’ NAND flash joint venture, IM Flash Technologies (IMFT) – is five times faster than conventional NAND, allowing data to be transferred in a fraction of the time for computing, video, photography and other computing applications.

The new high speed NAND can reach speeds up to 200 megabytes per second (MB/s) for reading data and 100 MB/s for writing data, achieved by leveraging the new ONFI 2.0 specification and a four-plane architecture with higher clock speeds. In comparison, conventional single level cell NAND is limited to 40 MB/s for reading data and less than 20 MB/s for writing data.



 



 

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