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WD first to make 512Gb 64-layer TLC 3D NAND flash memory

Posted on Tuesday, February 07 2017 @ 15:14:33 CET by


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Western Digital bought itself a lot of flash memory know-how via its acquisition of SanDisk. Now the storage firm reports it entered pilot production of world's first triple-bit-per-cell (TLC) 64-layer 3D NAND with a capacity of 512Gb. The new storage chip was designed in cooperation with long-term SanDisk partner Toshiba.
Western Digital Corp. (NASDAQ: WDC) today announced that it has commenced pilot production of the company's 512 Gigabit (Gb) three-bits-per-cell (X3) 64-layer 3D NAND (BICS3) chip in Yokkaichi, Japan, with mass production expected in the second half of 2017. The first of its kind, the chip is the latest achievement in a nearly three-decades-long legacy of flash memory industry firsts from the storage leader.

"The launch of the industry's first 512Gb 64-layer 3D NAND chip is another important stride forward in the advancement of our 3D NAND technology, doubling the density from when we introduced the world's first 64-layer architecture in July 2016," said Dr. Siva Sivaram, executive vice president, memory technology, Western Digital. "This is a great addition to our rapidly broadening 3D NAND technology portfolio. It positions us well to continue addressing the increasing demand for storage due to rapid data growth across a wide range of customer retail, mobile and data center applications."

The 512Gb 64-layer chip was developed jointly with the company's technology and manufacturing partner Toshiba. Western Digital first introduced initial capacities of the world's first 64-layer 3D NAND technology in July 2016 and the world's first 48-layer 3D NAND technology in 2015; product shipments with both technologies continue to retail and OEM customers.




 



 

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