In an exclusive interview with EE Times, representatives of ChangXin Memory (formerly known as Innotron Memory) said the company has completed its Fab 1 and R&D facility in Hefei, the capital of Anhui province, and is currently running 20,000 wafers per month. It is scheduled to double its capacity to 40,000 wafers per month in the second quarter of 2020. Using a 19-nm process technology, ChangXin has begun producing this fall DDR4 and LPDDR4 specialty DRAM 8Gbit products.Full details at EE Times.
Instead of competing head-to-head with global memory giants such as Samsung, SK Hynix and Micron in the commodity DRAM market, ChangXin has chosen to pursue the production of specialty DRAM.
ChangXin is first Chinese DDR4 maker
Posted on Wednesday, December 04 2019 @ 18:39 CET by Thomas De Maesschalck
EE Times had a chat with ChangXin Memory (CXMT). This Chinese firm claims it's the country's first DRAM manufacturer. The country has managed to make its entry into the NAND flash memory market but so far attempts to make DRAM failed due to a variety of reasons. Now ChangXin says it has completed its Fab 1 and is outputting 20,000 wafers per month. ChangXin makes DDR4 and LPDDR4 chips on a 19nm process. The company reportedly has access to Qimonda’s IP.