Infineon cooperates to develop phase-change memory

Thomas De Maesschalck Posted on by
Infineon, IBM and Macronix are cooperating to develop a new type of computer memory. Phase-change memory (PCM) will use a totally different technique to store data, instead of electrical charges it will use a special material that changes its state from an amorphous to a crystalline structure.

Phase-change memory has some clear advantages over conventional memory chips; it will feature higher storage density, higher speeds and the data won't vanish if the power is interrupted.

The phase-change memory technology could be used for a wide range of applications, ranging from high performance computer servers to consumer electronic devices.

The initiative combines IBM’s strengths in the research of fundamental materials and physics research, Infineon’s competence in the research, development and high volume manufacturing of various memory technologies and product types and Macronix’s experience in nonvolatile memory technologies.

The research work will be conducted at IBM’s TJ Watson Research Center in Yorktown Heights, New York and the IBM Almaden Research Lab in San Jose, California. Between 20 to 25 employees from IBM, Infineon and Macronix will work together on the PCM project.
Thomas De Maesschalck

About the Author

Thomas De Maesschalck

Thomas has been messing with computer since early childhood and firmly believes the Internet is the best thing since sliced bread. Enjoys playing with new tech, is fascinated by science, and passionate about financial markets. When not behind a computer, he can be found with running shoes on or lifting heavy weights in the weight room.
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Comments (1)

  1. Anonymous

    Solid State Drives will Cost over $ 25.00 a Gigabyte verus the Hard Drive < $ .50 a Gigabyte versus Blu-Ray / HD-DVD $ .012 versus Dvd-R $ .08 versus Inphase Worm Holographic $ .50 versus Atomic Holographic Drive < $ 0.0004 a Gigabyte. Phase change solid state memory falls between $ 25.00 and $ 5.00 a gigabyte, too expensive and too slow.

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