The MR effect, which represents a phenomenon that electric resistance strengthens by magnetism, is observed at less than 10% using the obsolete MR head, less than 100% using the GMR head, which is the most used today, and about 400% in fundamental tests using the TMR head, which is increasingly used these days. The newly found CBAMR effect sharply boosts these MR effects by 100 times at a breath. In experiments, the group created a single-electron transistor consisting of 5-nm thin Ga-Mn-As ferromagnetic semiconductor film, and confirmed more than 100 times stronger electric resistance using the transistor.
Hitachi discovers way to create HDD with density of 1Tb per square inch
Posted on Monday, August 14 2006 @ 0:54 CEST by Thomas De Maesschalck
The MR effect, which represents a phenomenon that electric resistance strengthens by magnetism, is observed at less than 10% using the obsolete MR head, less than 100% using the GMR head, which is the most used today, and about 400% in fundamental tests using the TMR head, which is increasingly used these days. The newly found CBAMR effect sharply boosts these MR effects by 100 times at a breath. In experiments, the group created a single-electron transistor consisting of 5-nm thin Ga-Mn-As ferromagnetic semiconductor film, and confirmed more than 100 times stronger electric resistance using the transistor.