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Intel 45nm High-K Metal Gate Transistor technology at IDF

Posted on Wednesday, April 18 2007 @ 19:46:21 CEST by

Intel released some details about its 45nm high-k + metal gate transistors at the IDF in Beijing today:

Intel's next-generation processors for the ultra-mobile, mobile, desktop, workstation and server segments will be based on the company's leading 45nm silicon process technology that uses its revolutionary high-k metal gate transistors.

During his Technology Insight presentation, Intel Senior Fellow Mark Bohr said the company now has working versions of its Silverthorne processor based on its 45nm Hi-k low power microarchitecture for MIDs and UMPCs. Silverthorne joins already working versions of its 45nm Hi-k Intel Core 2 Duo, Core 2 Quad and Intel Xeon family of processors. Today, Intel has more than 15 different 45nm Hi-k product designs in various stages of development, and will have two 45nm manufacturing fabs in production by the end of the year, with four in production by the second half of 2008.

Intel's long-standing research and technology pipeline has led to innovative advances in silicon technology that in turn allow the company to continuously deliver the cost and performance benefits of Moore's Law. In 2003, Intel was the first to introduce strained silicon technology to greatly increase the speed of its transistors on its 90nm process.

Intel is already working on technology for 32nm, 22nm and beyond. Bohr described several options that Intel is researching for future technology generations, including tri-gate transistors, Indium Antimonide quantum well transistors and carbon nanotube interconnects.



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