Samsung today announced it has created the first 60nm 2Gb DDR2 memory chips.
Applying the ultra finer 60-nanometer processing technology, the new chip will be massively produced from later this year, the South Korean chipmaker said Wednesday.
In comparison with the previous 80-nanometer 2-gigabit DDR2, the advanced 60 nano-scale with a transmitting speed of 800 megabits per second has enhanced DRAM performance by up to 20 percent and increased production efficiency by 40 percent, Samsung added.
``The move itself has a rather greater meaning as Samsung Electronics made a room to gear up the move towards higher densities in high-end chip segments,'' said a company official.
He added the new device provides storage capacity twice as much as in existing system memory solutions, accelerating efforts by chipmakers to memory capacity.
``We expect the new chip to contribute to stabilizing the prices of DRAM chips,'' said another Samsung official.
With the introduction of the 2-gigabit DDR2, Samsung completes its DDR2 product lineup for production at the 60-nano scale from 512-megabit to 2-gigabit. Its 1-gigabit and 512-megabit chips are already being produced with 60-nano technology.