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OCZ EB technology builds on optimal usage of DDR command structures to warrant continuous data transfers regardless of the CAS latency of the memory components. This scheme can be extended beyond CAS latency values used in current DDR DRAM technology.

OCZ EB technology challenges conventional wisdom that implicates increased CAS latency as the main factor causing reduced effective bandwidth. OCZ engineers have shown that by reducing the latency cycles associated with the precharge-to-activate delay and the RAS-to-CAS delay along with the use of the Variable Early Read Command feature of DDR, higher effective data bandwidth is possible.

“Enhanced Bandwidth technology is an exciting improvement that, at 2.5-2-3 (CL-tRP-tRCD) latencies, allows most applications to use data bandwidth that is the same as that delivered by CL-2 modules,” said Dr. Michael Schuette, OCZ director of technology development. “By extension, this means that OCZ memory modules provide the most efficient DDR solution available in the retail channel.”