Memory maker Micron announced that it is sampling 4GB DDR3 memory modules for notebooks, these modules are designed using 2 gigabit components.
The fast speeds, high-density and low-power of Micron’s portfolio of DDR3 modules – ranging in density from 512 megabytes (MBs) to now 4 GBs – allow these systems and applications to perform more effectively and utilize power more efficiently.
“With our new 4 GB DDR3 modules, we are allowing users to easily take advantage of the performance benefits that increased memory provides,” said Brian Shirley, Vice President of Micron’s Memory Group.
The company also announced it has received Intel’s validation on 512 MB, 1 GB and 2 GB DDR3 notebook modules for the upcoming Intel Centrino 2 processor technology mobile platform. Micron’s 4 GB DDR3 notebook modules are currently going through the validation process at Intel.
Micron’s DDR3 modules support data rates of up to 1333 megabits per second, enabling better system and graphics performance, which provides for a more interactive user experience. DDR3 supply voltage operates at 1.5-volts in comparison to DDR2’s 1.8-volts, reducing power consumption by up to 30 percent.
“With increased memory adoption on the rise in notebook computers, reduced power consumption is becoming even more important to enable longer battery life and keep the system running,” continued Shirley.
Micron’s 512 MB, 1 GB and 2 GB modules are in mass production now, with its 2 Gb-based DDR3 4 GB modules expected to be in mass production in Q2 2008.