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Taiwan Semiconductor Manufacturing Co. Ltd. (TSMC) has rolled out its 28-nm process and revealed a surprise: It has pushed out--or delayed--its initial high-k/metal-gate offering until 28-nm, putting it slightly behind its rivals in Chartered, IBM and Samsung. TSMC was originally supposed to have its high-k/metal-gate offering at the 32-nm node.

Silicon foundry giant TSMC (Hsinchu, Taiwan) also provided details of its yet-to-be-introduced 32-nm process. The 32-nm process is a cost-down version of its 40-nm technology, while 28-nm is considered by TSMC as a ''full-node'' offering. As expected, both the 32- and 28-nm processes make use of 193-nm immersion lithography, copper-interconnects, ultra low-k dielectrics, strained-silicon and other features.

At 28-nm, TSMC plans to offer two separate options for the gate stack: conventional silicon oxynitride (SiON) and a newfangled high-k/metal-gate technology. It will offer two 28-nm versions with high-k and metal gates: a low-power and high-performance technology.

But at 32-nm, the company will only offer a SiON for the gate stack, which appears to be a change in direction for TSMC.