DV Hardware bringing you the hottest news about processors, graphics cards, Intel, AMD, NVIDIA, hardware and technology!

   Home | News submit | News Archives | Reviews | Articles | Howto's | Advertise
DarkVision Hardware - Daily tech news
October 25, 2016 
Main Menu
News archives

Who's Online
There are currently 114 people online.


Latest Reviews
Zowie P-TF Rough mousepad
Zowie FK mouse
BitFenix Ronin case
Ozone Rage ST headset
Lamptron FC-10 SE fan controller
ZOWIE G-TF Rough mousepad
ROCCAT Isku FX gaming keyboard
Prolimatech Magnetic Pin

Follow us

Scientists increase MRAM efficiency

Posted on Tuesday, September 30 2008 @ 04:55:34 CEST by

Japanese physicists found a way to create faster and more power efficient MRAM:
The research team at Tohoku University has utilized a property of magnetic domains in a new way. Domains are the pockets within MRAM cells that hold either a charge or a void. And, like tiny magnets, domains have both a north and south pole.

In the currently dominant spin-torque model for MRAM, the ability to read or store a binary 1 or 0 depends on flipping the orientation of the charge in the domain by passing a current through tiny electromagnets nearby. North up means one value, south up means another. To read the data a small current is passed through a lead.

A similar approach is used to read the state of the charge using this new method. However, the manner in which the charge is stored is where the power savings come in.



DV Hardware - Privacy statement
All logos and trademarks are property of their respective owner.
The comments are property of their posters, all the rest © 2002-2016 DM Media Group bvba