DailyTech reports researchers at Rice University are developing graphene-based memory that will feature a much higher storage density, while consuming a lot less energy as well.
A team of researchers at Rice University has found a method of creating a new type of memory from a strip of graphite only 10 atoms thick. Graphite is the basic element in the new type of memory. The scientists describe in a paper published in the online journal Nature Materials a storage device that utilizes the conducting properties of graphene. A large clump of graphene is better known as graphite, something school kids doodle with everyday.
Rice professor James Tour says that graphene memory would increase the amount of storage in a two-dimensional array by about five times. He says that this massive improvement is due to the individual bits being able to be made smaller than 10 nanometers. By comparison, circuitry in your average flash memory chip today is 45nm. Another big benefit of graphene memory is that switches can be controlled by two terminals rather than the three terminals used in flash memory today.
The two-terminal capability is important because it provides the capability to make three-dimensional memory practical since the very thin graphene arrays can be stacked, multiplying the storage capacity of the array with each graphene layer.
Storage arrays using graphene will be mechanical devices at their core and as such, the chips will consume very little power. Much lost power in flash storage comes from leakage; graphene memory will need little power leading to less leakage while keeping data intact. Graphene memory has a massive improvement in on-off power ratio compared to current memory technologies.