DV Hardware bringing you the hottest news about processors, graphics cards, Intel, AMD, NVIDIA, hardware and technology!

   Home | News submit | News Archives | Reviews | Articles | Howto's | Advertise
DarkVision Hardware - Daily tech news
October 24, 2016 
Main Menu
News archives

Who's Online
There are currently 77 people online.


Latest Reviews
Zowie P-TF Rough mousepad
Zowie FK mouse
BitFenix Ronin case
Ozone Rage ST headset
Lamptron FC-10 SE fan controller
ZOWIE G-TF Rough mousepad
ROCCAT Isku FX gaming keyboard
Prolimatech Magnetic Pin

Follow us

Samsung unveils low-power 4Gb DDR3 chip

Posted on Friday, January 30 2009 @ 00:20:05 CET by

Samsung has unveiled world's first 4Gb DDR3 memory chips, using a 50nm process technology.
“We have leveraged our strength in innovation to develop the first 4Gb DDR3, in leading the industry to higher DRAM densities,” said Kevin Lee, vice president, technical marketing, Samsung Semiconductor, Inc. “By designing our 4Gb DDR3 using state-of-the-art 50-nm class technology, we are setting the stage for what ultimately will result in significant cost-savings, for servers and for the overall computing market,” he added.

The 4Gb DDR3 can be produced in 16 gigabyte (GB) registered dual in-line memory modules (RDIMM) for servers, as well as 8GB unbuffered DIMM (UDIMM) for workstations and desktop PCs, and 8GB small outline DIMM (SODIMM) for laptops. By applying dual-die package technology, this new device can deliver modules of up to 32GB – offering twice as much capacity as memory modules based on the previous highest chip density of 2Gb.

Designed to be low-powered, the 4Gb DDR3 DRAM operates at 1.35 volts (V), therein improving its throughput by 20 percent over a 1.5V DDR3. Its maximum speed is 1.6 gigabits per second (Gbps).

In 16GB module configurations, 4Gb DDR3 can consume 40 percent less power than 2Gb DDR3 because of its higher density and because it uses only half the DRAM (32 vs. 64 chips).

With an aggressive conversion to 50nm-class production for higher density DDR3, Samsung intends to remain the clear leader in high-volume/high-performance DRAM.

In September 2008, Samsung announced its development of the world’s first 50 nm-class 2Gb DDR3 DRAM. Now, just five months after, it has established the industry’s broadest line-up of high-performance DDR3 products using 50 nm-class process technology (4Gb, 2Gb, 1Gb).



DV Hardware - Privacy statement
All logos and trademarks are property of their respective owner.
The comments are property of their posters, all the rest © 2002-2016 DM Media Group bvba