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“Compared to the 8GB memory modules used in today’s servers, our new module packs an eco-sensitive wallop with four times the density at significantly reduced power levels and no increase in the overall footprint,” said Jim Elliott, vice president, memory marketing, Samsung Semiconductor, Inc. “For data centers, it’s a powerhouse in energy efficiency and performance,” he added.

Based on Samsung’s 50 nanometer (nm)-class 4 Gigabit (Gb) DDR3, the 1.35V DDR3 DRAM improves throughput by 20 percent over a 1.5V DDR3. Its lower power consumption levels are in line with the pressing concern for more energy-efficient “green” systems and components. The development of low-power 4Gb DDR3 will be viewed as critical in reducing data center costs, improving server time management and increasing overall operational efficiency at higher densities.

For the new generation of green servers, the 4Gb DDR3’s high density combined with its lower level of power consumption will not only reduce electricity bills, but also allow for a cutback on installment fees, maintenance fees and repair fees involving power suppliers and heat-emitting equipment.

The new 32GB registered dual inline memory module (RDIMM) consists of 72 4Gb DDR3 chip dies produced using Samsung’s 50-nanometer class DRAM production technology. A row of nine quad-die package (QDP) 16Gb DDR3s are mounted on each side of the printed circuit board for a collective 32GB, highly compact configuration.