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Toshiba and SanDisk to make sub-30nm NAND flash in 2H 2010
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Posted on Monday, September 21 2009 @ 16:23:08 CEST by Thomas De Maesschalck |
DigiTimes heard Toshiba and SanDisk are gearing up to enter mass production of 20nm-class NAND flash memory chips in the second half of 2010:
Toshiba and its NAND flash partner SanDisk reportedly plan to begin mass producing NAND flash chips fabricated on 20nm-class process technology in the second half of 2010, according to industry sources. In line with the technology migration, SanDisk and Toshiba's joint-venture manufacturing facilities in Yokkaichi (Mie prefecture, Japan) is expected to ramp up its monthly capacity to around 200,000 wafers.
Toshiba, which recently started mass production of 3-bit per cell (3bpc) 32nm devices, originally expected 32nm to account for over 50%of the total output from the Yokkaichi operations by the end of 2009, the sources said. But the ramp-up reportedly has been behind schedule, the sources added.
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