Toshiba and its NAND flash partner SanDisk reportedly plan to begin mass producing NAND flash chips fabricated on 20nm-class process technology in the second half of 2010, according to industry sources. In line with the technology migration, SanDisk and Toshiba's joint-venture manufacturing facilities in Yokkaichi (Mie prefecture, Japan) is expected to ramp up its monthly capacity to around 200,000 wafers.
Toshiba, which recently started mass production of 3-bit per cell (3bpc) 32nm devices, originally expected 32nm to account for over 50%of the total output from the Yokkaichi operations by the end of 2009, the sources said. But the ramp-up reportedly has been behind schedule, the sources added.
Toshiba and SanDisk to make sub-30nm NAND flash in 2H 2010
Posted on Monday, September 21 2009 @ 16:23 CEST by Thomas De Maesschalck