Infineon and Nanya announced that they have signed an agreement to expand their development cooperation on DRAMs. The agreement provides for the joint development of advanced 60nm production technologies for 300mm wafers, starting September 2005. The cooperation is the extension of the existing co-development of the 90nm and 70nm production technologies and will help each partner expand its position in the DRAM market while sharing development costs.
The new production technology, jointly developed at Infineon’s Dresden site may be used in both companies and at their manufacturing joint venture Inotera Memories. Further collaboration on the development of 60nm reference products in Munich is also planned. Infineon and Nanya have together committed more than 100 people to work on this development project. The first 300mm wafer memory products using the new 60nm process is expected to leave the production line in 2008.
In addition to the joint development of advanced DRAM trench technologies, Infineon and Nanya are also partners in the manufacturing joint venture Inotera, situated in Taoyuan, Taiwan. Inotera focuses on the production of DRAM products and has in the meanwhile ramped to a capacity of more than 60,000 wafer starts per month turning it into one of the worldwide largest manufacturing facilities.