ISi talks about Z-RAM memory technology

Posted on Wednesday, March 29 2006 @ 2:09 CEST by Thomas De Maesschalck
DigiTimes posted a Q&A with Innovative Silicon (ISi) about the development and licensing of Z-RAM memory technology.
Building on advances in silicon-on-insulator (SOI) technology, Z-RAM exploits the so-called floating-body effect, where capacitance develops between the body of the transistor and the insulating layer. To that extent, Z-RAM exploits what would normally be regarded as an unwanted parasitic effect. The net result is the ability to store a binary one or zero, using no capacitor as such (Zero capacitor-RAM) and only one transistor, as opposed to the six transistors of an SRAM cell, or the one transistor and one capacitor of a DRAM cell.
You can read the full article over here.

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