ISi talks about Z-RAM memory technology

Posted on Wednesday, March 29 2006 @ 2:09 CEST by Thomas De Maesschalck
DigiTimes posted a Q&A with Innovative Silicon (ISi) about the development and licensing of Z-RAM memory technology.
Building on advances in silicon-on-insulator (SOI) technology, Z-RAM exploits the so-called floating-body effect, where capacitance develops between the body of the transistor and the insulating layer. To that extent, Z-RAM exploits what would normally be regarded as an unwanted parasitic effect. The net result is the ability to store a binary one or zero, using no capacitor as such (Zero capacitor-RAM) and only one transistor, as opposed to the six transistors of an SRAM cell, or the one transistor and one capacitor of a DRAM cell.
You can read the full article over here.

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Thomas De Maesschalck

Thomas has been messing with computer since early childhood and firmly believes the Internet is the best thing since sliced bread. Enjoys playing with new tech, is fascinated by science, and passionate about financial markets. When not behind a computer, he can be found with running shoes on or lifting heavy weights in the weight room.

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