AMD his researches today detailed their creation of new triple-gate transistors using next-generation SOI (silicon-on-insulator) and advanced metal gate technologies. They claim that AMD his unique design delivers more than 50% better performance than previously published multi-gate research.
This surpasses 2009 requirements set by the International Technology Roadmap for Semiconductors (ITRS), but because the design is also highly compatible with current manufacturing techniques, AMD views this technology as a leading candidate for volume production as early as 2007.
“This new triple-gate design takes us one step closer to making multi-gate transistors a production reality. It is this kind of research that enables us to deliver higher performance solutions to our customers on an aggressive schedule,” said Craig Sander, vice president of process technology development for AMD. “This multi-gate transistor implementation is highly compatible with current manufacturing techniques, which improves our ability to put this technology into high-volume production.”
The primary working parts of a microchip, transistors are microscopic switches that turn the flow of electrical current on and off. Better transistor performance is a key contributor to better microprocessor performance.