At the Intel Developer Forum last week Intel denied that they were having problems with the 90nm process. Louis Burns said that the development of 90nm wafer fabrication technology is proceeding on shedule.
According to its roadmap, Intel will begin 90nm volume production of Prescott-based processors by year-end and then that of Dothan-based processors.
Burns said that Intel’s 0.13-micron process yields at its 12-inch Fabs D1C and 11X had exceeded those at its 8-inch fabs. In upgrading to 90nm processing, Fab D1C has begun small-scale production and equipment is being installed at Fabs 11X and 24.
The company has attained yields suitable for volume production of 90nm-based processors at Fab D1C, according to Burns. Incorporating CDO (carbon-doped oxide, a low-k dielectric material) technology, seven copper interconnect layers and flip chip packaging, the processors’ performance was outstanding, he added. Fabs 11X is slated to begin volume production next quarter and Fab 24 will start wafer input in 2004.
Further, Intel has begun 65nm test production at its Fab D1D and Fabs 24 and 12C will follow in 2005.
When Intel enters 32 and 22nm processing in 2009 and 2011, respectively, the transistors will be smaller than a chromosome, Burns noted.