Elpida found technique to create faster DRAM chips

Posted on Monday, January 05 2004 @ 18:22 CET by Thomas De Maesschalck
Elpida claims that they have created a technique to speed up DRAM chips. According to nikkei.net Elpida was able to create a DDR-2 512Mbit chip with a read and write speed of 666Mbps.
That's 25 times faster than existing DDR-2 technology, apparently.

According to the report, Elpida is using boron rather than phosphorous as the doping ageny for its silicon chips. The gate electrode is insulated using a nitride rather than a dioxide material, and will introduce the chips towards the end of this year.

Just before the New Year, Elpida severed its connection with ProMOS and forged a new agreement with Chinese semiconductor firm SMIC.
Source: The Inquirer

About the Author

Thomas De Maesschalck

Thomas has been messing with computer since early childhood and firmly believes the Internet is the best thing since sliced bread. Enjoys playing with new tech, is fascinated by science, and passionate about financial markets. When not behind a computer, he can be found with running shoes on or lifting heavy weights in the weight room.

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