Elpida claims that they have created a technique to speed up DRAM chips. According to nikkei.net Elpida was able to create a DDR-2 512Mbit chip with a read and write speed of 666Mbps.
That's 25 times faster than existing DDR-2 technology, apparently.
According to the report, Elpida is using boron rather than phosphorous as the doping ageny for its silicon chips.
The gate electrode is insulated using a nitride rather than a dioxide material, and will introduce the chips towards the end of this year.
Just before the New Year, Elpida severed its connection with ProMOS and forged a new agreement with Chinese semiconductor firm SMIC.