|"Last December, we broke new ground once again when we were first to begin sampling the world's fastest memory," said Shozo Saito, Technology Executive of Semiconductor Company at Toshiba Corporation. "By combining our advanced expertise in trench capacitor cell technology and high speed DRAM with Rambus's ingenious chip-to-chip interface technology, we successfully developed this extraordinary chip, capable of delivering unprecedented multi-gigahertz of data to power future consumer and graphics devices."
"Providing our customers with XDR DRAMs will allow us to continue supplying the market with high-quality memory products that provide exceptional bandwidth capabilities," said Tom Quinn, vice president of Samsung Semiconductor memory sales and marketing. "We look forward to ramping XDR DRAM into high-volume production in 2004 and 2005."
XDR DRAMs are based on Rambus's XDR memory interface technology. Three of the key innovations include:
Rambus also said that Toshiba and Samsung are in the process of sampling XDR DRAMs and look forward to their ramp to volume production later this year and into 2005.