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OCZ to improve memory bandwidth with Enhanced Bandwidth technology

Posted on Saturday, March 13 2004 @ 15:49:32 CET by

OCZ has announced a new technology which will help them to improve DDR memory bandwidth, also they announced several products featuring the new Enhanced Bandwidth (EB) technology.
OCZ EB technology builds on optimal usage of DDR command structures to warrant continuous data transfers regardless of the CAS latency of the memory components. This scheme can be extended beyond CAS latency values used in current DDR DRAM technology.

OCZ EB technology challenges conventional wisdom that implicates increased CAS latency as the main factor causing reduced effective bandwidth. OCZ engineers have shown that by reducing the latency cycles associated with the precharge-to-activate delay and the RAS-to-CAS delay along with the use of the Variable Early Read Command feature of DDR, higher effective data bandwidth is possible.

“Enhanced Bandwidth technology is an exciting improvement that, at 2.5-2-3 (CL-tRP-tRCD) latencies, allows most applications to use data bandwidth that is the same as that delivered by CL-2 modules,” said Dr. Michael Schuette, OCZ director of technology development. “By extension, this means that OCZ memory modules provide the most efficient DDR solution available in the retail channel.”
OCZ is releasing new Enhanced Bandwidth memory products in its Platinum series. Currently they are offering PC3200, PC3500 unbuffered DDR memory in 256MB, 512MB and 1GB single modules. Paired EB DDR memory is also available in 512 MB (2x256), 1 GB (2x512), and 2 GB (2x1024) kits.

Much more information regarding this technology can be found here



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