Posted on Tuesday, February 12 2008 @ 2:40 CET by Thomas De Maesschalck
Micron announced it is sampling industry's fastest 512Mb mobile DRAM chips for smartphones.
Micron’s 512 Mb Mobile DRAM addresses the needs of today’s most advanced mobile devices by delivering maximum clock speeds of up to 200MHz allowing the transfer of 400 Mbs of data per second. This industry-leading speed provides the additional bandwidth necessary to boost the operating capability of mobile applications, including running more functions simultaneously without performance issues or powering high speed video.
“The trend of full-featured mobile products that offer more audio, video and computing functionality only continues to grow, creating an increased demand for memory products that can support these advanced capabilities,” said Bill Lauer, senior director of marketing for Micron’s memory group. “With its industry-leading speed, small form factor and reduced power consumption, Micron’s 512 Mb Mobile DRAM is ideal for meeting the requirements of today’s handheld products.”
In addition to meeting the JEDEC standard 1.8 volt input/output (I/O), the device is also available with a 1.2 volt I/O option that improves signaling for high-speed, high-bandwidth operation and is a key design requirement for next generation mobile chip sets. It also offers an extended operating temperature range from -40 degrees Celsius to +85 degrees Celsius making it optimal for products performing in extreme conditions. The company plans to assemble the 512 Mb Mobile DRAM with NAND flash and Managed NAND parts, and also intends to offer it in a multi-chip package or a package-on-package stack.
