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Qimonda developing 30nm DRAM

Posted on Wednesday, February 27 2008 @ 04:12:59 CET by


Qimonda announced its technology roadmap down to the 30nm generation and cell sizes of 4F².
Qimonda’s innovative Buried Wordline DRAM technology combines high performance, low power consumption and small chip sizes to further advance the company’s diversified product portfolio. Qimonda is introducing this leading edge technology now in 65nm and plans to begin production of a 1 Gbit DDR2 in the second half of calendar 2008.

“This new technology has the potential to deliver improvements in our productivity and cost per bit that are unprecedented in our company’s history,” said Kin Wah Loh, President and CEO of Qimonda AG. “We are the first in the industry to unveil a DRAM technology roadmap down to the 30nm generation, enabling cell sizes as small as 4F². The introduction is the result of our continuous innovation as a leader in the development of memory products. This step also opens up further partnering opportunities.”

Qimonda targets to start mass production of 46nm Buried Wordline DRAM technology in the second half of 2009. This node will offer more than twice the bits per wafer over the company’s 58nm trench technology. The company expects an additional one-time investment of approximately Euro 100 million in total during financial years 2009 and 2010 to convert its existing in-house trench capacities to the Buried Wordline technology, which it expects to finance from its cash flows. This relatively low level of additional investment is possible by leveraging a combination of Qimonda’s Buried Wordline and lean manufacturing process with a mainstream stack capacitor.



 



 

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