Infineon tranfers 90nm DRAM tech to Winbond

Posted on Friday, August 06 2004 @ 10:52 CEST by Thomas De Maesschalck
Infineon is going to transfer its 90nm DRAM process technology and 12-inch fab production expertise to Winbond Electronics. The two firms are going to use the technology to produce low-power SDRAM and pseudo SRAM (PSRAM). They may also use it to develop flash memory, at some point.
Winbond can use the technology on either 8- or 12-inch wafers, according to Regine Liu, a manager with Infineon Technologies Taiwan. Winbond will also acquire Infineon’s assistance in planning fabrication and in the capacity ramp of its 12-inch fab in Taichung.

In addition, Winbond will reserve a portion of the fab’s capacity for Infineon and will pay license fees and royalties to the Germany-based chipmaker.

Infineon will not fund construction of Winbond’s 12-inch fab, both companies reiterated.

Winbond broke ground for the 12-inch fab in late July and expects to begin mass production in the first quarter of 2006. The fab will have a monthly capacity of 24,000 wafers by the end of 2006 and double that figure in 2007.
At the moment Winbond already produces DRAM with Infineon's 0.11-micron technology at its 8-inch fab.

Source: DigiTimes

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Thomas De Maesschalck

Thomas has been messing with computer since early childhood and firmly believes the Internet is the best thing since sliced bread. Enjoys playing with new tech, is fascinated by science, and passionate about financial markets. When not behind a computer, he can be found with running shoes on or lifting heavy weights in the weight room.

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