Samsung presents 2Gb DDR2 DRAMs

“Samsung developed the DDR2 SDRAM using an advanced 80nm process technology, overcoming the industry expectations that 2Gb DRAM manufacture would require sub 65nm circuitry,” Samsung said in the statement.

The new DRAM technology breakthroughs include a 3D transistor technology, recess channel array transistor (RCAT), and a new concept architecture process. First introduced 2003, RCAT is a technology unique to Samsung that reduces transistor area space by implementing a 3-D structural design, increasing the integration level for higher density on a given area.

To address the high performance features of the DDR2 specification, Samsung adopted a double poly gate technology, 20-angstrom level ultra thin oxide film process, and a triple-layer metal circuitry. The high speed process technology coupled with the feasible 80nm technology also advances the time-to-market availability of the new DDR2 device.

The 2Gb DDR2 devices meet fine-pitch ball grid array (FBGA) package specifications for DDR2. Even without modifications, the devices can directly drive module density levels of Gigabyte (GB) scale; 2GB, 4GB and 8GB.