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Toshiba makes breakthrough for future development of 16nm chips

Posted on Friday, June 19 2009 @ 02:56:59 CEST by


Toshiba researchers have made a breakthrough which could have significance for future development of chips at 16nm processes.
Toshiba said it has overcome the challenge of fabricating a thin gate stack while maintaining high hole mobility, by inserting SrGex, a compound of strontium (Sr) and germanium, as an interlayer between the high-k insulating layer and the germanium channel.

The technology realises peak hole mobility of 481cm sq./Volt-second.

Toshiba will continue to develop the technology as an option toward implementation of Ge-MISFET to 16nm chips and beyond.
More info at Electronics Weekly.



 



 

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