Competition is hotting up in NAND flash memory as South Korea's Hynix Semiconductor Inc. has claimed it has used a 26-nm manufacturing process technology to produce a device with a capacity of 64-Gbits, according to reports. And local rival Samsung has said it is aiming to have a 27-nm NAND flash memory in production in the second quarter of 2010, according to another report.
With its announcement Hynix is following hard on the heels of Intel and Micron who, with their manufacturing joint venture, rolled out a 25-nm, 64-Gbit device earlier this month, thereby recapturing the technology lead in NAND flash memory.
Samsung and Hynix working on sub-30nm NAND
Posted on Wednesday, February 10 2010 @ 2:36 CET by Thomas De MaesschalckEE Times reports both Samsung and Hynix are working on sub-30nm flash memory technology:
