Gargini, also chairman of the International Technology Roadmap for Semiconductors (ITRS), said in the presentation that the inclusion of III-V materials is a 2015 transistor option that could deliver either three times the performance of silicon at the same power consumption, or deliver the same performance as silicon at one-tenth the power consumption. However, integration of a thin compound semiconductor transistor channel with conventional silicon manufacturing would be the key to adoption.More info at EE Times.
While exceptional progress has been made in silicon to get to 32-nm, Gargini indicated in his slides that progress is coming only with more and more complicated additions to the basic silicon manufacturing process, such as the increased amounts of strain necessary to increase the electron mobility above its natural value; and the possible use of 3-D structures such as FinFETs.
Intel may use III-V-on-silicon transistors in 2015
Posted on Friday, February 12 2010 @ 19:05 CET by Thomas De Maesschalck