Posted on Sunday, June 13 2010 @ 13:37 CEST by Thomas De Maesschalck
EE Times
reports Hitachi will reveal more information about its spin-transfer torque RAM (SPRAM) technology at next week's Symposium on VLSI Technology in Honolulu, Hawaii. Additionally, the company is reportedly considering to spinoff this division into a new company.
Japan's Hitachi (Tokyo) is also mulling plans to spinoff its SPRAM R&D efforts into a new company, but no decision has been made.
SPRAM is a next-generation MRAM. MRAM is a memory that uses the magnetism of electron spin to provide non-volatility. The technology is said to have unlimited endurance, but to date, MRAM has proven difficult to manufacture in mass volumes.
Spin transfer torque random access memory (STT-RAM) technology is a second-generation magnetic-RAM technology that is said to solve some of the problems posed by conventional MRAM structures. Avalanche, Crocus Technology, Everspin, Grandis, Hynix, IBM-TDK, Qualcomm, Renesas, Samsung, TSMC, Toshiba and others are looking at STT-RAM.
