The XDRTM DRAM is based on Rambus's XDR memory interface technology and offers an octal data rate (ODR), supporting transfers of eight data in a single clock cycle. The latest 512-megabit XDRTM DRAM (TC59YM916BKG) transfers data at 4.8GHz with a 1.8V VDD and supports peak operation of 6.4GHz, the fastest data transfer rate yet achieved: four times faster than the performance of 1.6GHz Graphic Double Data Rate (GDDR) memory chips and twelve times faster than best-in-class 533MHz PC memories.
- Configuration: 4 megabit word x 8 banks x 16 bits (x4/x8/x16 programmable)
- Power Supply: 1.8V VDD
- Package Size: 1.27mm x 0.8mm pitch BGA
- Interface: DRSL (Differential Rambus Signal Level)
- Max. Data Rate: 4.8GHz
- Min. Cycle Time: 40ns (tRC)
"Toshiba has been playing a leadership role in realizing XDRTM DRAM technology," said Shozo Saito, Vice President of Memory Division, Semiconductor Company at Toshiba Corporation. "We were first in the world to sample first generation XDRTM DRAM in December 2003. We plan to mass-produce our second generation 512-megabit XDRTM DRAMs in the second half of 2005 to secure our leading position in this business area."