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Samsung 3D chip stacking process delivers 50 percent greater memory density

Posted on Thursday, December 09 2010 @ 00:35:17 CET by


Samsung presents a new 8GB DIMM that achieves a 50 percent greater memory density than traditional DIMMs by stacking memory chips on top of each other:
Samsung's new registered or buffered (RDIMM) product is based on its current Green DDR3 DRAM and 40 nanometer (nm)-sized circuitry. The new memory module is aimed at the server and enterprise storage markets.

The three-dimensional (3D) chip stacking process is referred to in the memory industry as through silicon via (TSV). Samsung said the TSV process saves up to 40% of the power consumed by a conventional RDIMM. Using the TSV technology will greatly improve chip density in next-generation server systems, Samsung said, making it attractive for high-density, high-performance systems.

The TSV technology creates micron-sized holes through the chip silicon vertically instead of just horizontally, creating a much denser architecture. Samsung said it eventually plans to apply the TSV technology to memory built with 30nm-class and smaller circuitry.
More details at ComputerWorld.


 



 

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