Samsung announced it started mass production of 70nm NAND flash devices with a capacity of 4Gbit.
The 4Gb NAND flash writes data at 16MB/s, a 50 percent boost over a 90nm 2Gb NAND flash device. The company says the high write speed allows real time storage of high-definition (HD) video.
The use the 70nm process allowed Samsung to create the industry's smallest memory cell. Market research firm Gartner believes 4Gb NAND flash will account for more than 30 percent of the total NAND flash memory market by the end of the year.
Samsung starts mass production of 4Gb NAND flash
Posted on Monday, May 30 2005 @ 12:40 CEST by Thomas De Maesschalck