Researchers in Taiwan and at the University of California predict a new type of nanodot memory can operate 10 to 100 times faster than current RAM, while being compatible with mainstream integrated circuit technologies. Full details at The Register.
They built silicon nanodot memory by embedding silicon nanodots, just 3nm in width, in a layer of non-conducting material, and the covering it with a thin metallic layer. The base layer, dot and metal layer forms a set of transistors, with each dot acting as one bit. Its state is changed by having a green laser's light positioned on the part of the metal gate layer above a dot and firing a sub-millisecond burst of hot light which anneals that precise area of the metal layer and causes a metal-gate function there, positioned above an embedded silicon nanodot below.
A paper, Fast Programming Metal-Gate Si Quantum Dot Nonvolatile Memory Using Green Nanosecond Laser Spike Annealing, describing this was published in the American Institute of Physics’ (AIP) journal Applied Physics Letters.