DV Hardware - bringing you the hottest news about processors, graphics cards, Intel, AMD, NVIDIA, hardware and technology!
   Home | News submit | News Archives | Reviews | Articles | Howto's | Advertise
DarkVision Hardware - Daily tech news
May 25, 2019 
Main Menu
News archives

Who's Online
There are currently 198 people online.


Latest Reviews
Ewin Racing Flash gaming chair
Arctic BioniX F120 and F140 fans
Jaybird Freedom 2 wireless sport headphones
Ewin Racing Champion gaming chair
Zowie P-TF Rough mousepad
Zowie FK mouse
BitFenix Ronin case
Ozone Rage ST headset

Follow us

Toshiba defines its ReRAM roadmap

Posted on Monday, October 01 2012 @ 17:01:29 CEST by

Toshiba logo
Bright Side of News dug up details abotu Toshiba's ReRAM (resistive random-access memory) plans. ReRAM has the potential to not only replace DRAM but also NAND flash memory and HDDs.
1)Toshiba will begin sampling BiCS 128-Gb and 256 Gb Flash memories in 2013. The devices will use a three-dimensional structure and scaling Flash technology that is near its theoretical limit and will use 16 layer stacking to provide required density. The company will begin Engineering sampling in 2014 with volume production following in 2015. Toshiba intends to further develop the new stacked Flash technology realizing 512-Gb through 1-Tb or higher capacity products.

2)Toshiba showed a picture of a 64-Gbit ReRAM test chip. The company plans to ship samples and start volume production at approximately the same time as the Flash BiCS [same density roadmap]. The company commented that they are planning ReRAM devices with slightly less or equal capacity as that of the Flash BiCS memories. Because ReRAMs enable writing data at high speeds, the company intends to use the ReRAM for performance-oriented storage devices such as cache memories and SSDs.



DV Hardware - Privacy statement
All logos and trademarks are property of their respective owner.
The comments are property of their posters, all the rest © 2002-2019 DM Media Group bvba