Posted on Monday, October 01 2012 @ 17:01 CEST by Thomas De Maesschalck
Bright Side of News
dug up details abotu Toshiba's ReRAM (resistive random-access memory) plans. ReRAM has the potential to not only replace DRAM but also NAND flash memory and HDDs.
1)Toshiba will begin sampling BiCS 128-Gb and 256 Gb Flash memories in 2013. The devices will use a three-dimensional structure and scaling Flash technology that is near its theoretical limit and will use 16 layer stacking to provide required density. The company will begin Engineering sampling in 2014 with volume production following in 2015. Toshiba intends to further develop the new stacked Flash technology realizing 512-Gb through 1-Tb or higher capacity products.
2)Toshiba showed a picture of a 64-Gbit ReRAM test chip. The company plans to ship samples and start volume production at approximately the same time as the Flash BiCS [same density roadmap]. The company commented that they are planning ReRAM devices with slightly less or equal capacity as that of the Flash BiCS memories. Because ReRAMs enable writing data at high speeds, the company intends to use the ReRAM for performance-oriented storage devices such as cache memories and SSDs.
