The pair already started to volume produce DRAM chips using their 20nm process nodes in 2012, the sources observed. Having the newer technology replace 30nm as the mainstream process node will likely take place in the second half of 2013, the sources believe.
Meanwhile, Samsung and Hynix will gradually turn their focus away from the market for PC DRAM, which continues to suffer from an oversupply of chips, the sources indicated. Their 20nm processes will initially target the manufacture of 4Gb chips used for mobile device and server applications, the sources said.
In addition, fellow DRAM firms Micron Technology, Nanya Technology and Inotera Memories are all gearing up for transition to 30nm process technology, the sources noted. The players have also accelerated their deployments in the markets for mobile DRAM and server memory chips, the sources said.
Samsung and SK Hynix gearing up 20nm DRAM production
Posted on Tuesday, October 23 2012 @ 19:44 CEST by Thomas De MaesschalckDigiTimes heard South Korean memory makers Samsung Electronics and SK Hynix have both stepped up efforts to migrate to 20nm process technology for DRAM production. This process node is anticipated to become the mainstream DRAM production node in 2013.
