Speaking at a company event in San Francisco, Samsung announced it will ramp its 10nm FinFET node in 2016. The South Korean electronics giant was shy on details but mentioned it plans to have 10nm in full production by late 2016, similar to the timeframe provided by rival TSMC. The firm added that two fabs in South Korea, one in Austin and the GlobalFoundries fab in NY state are now all running the 14nm process, stating the 14nm node will be a game changer for Samsung:
The Samsung 10nm process offers “significant power, area, and performance advantages” and targets a broad range of markets, said foundry senior vice president Hong Hao.
Samsung also provided additional details for its 14nm FinFET process, noting two fabs in South Korea; one in Austin, Texas, and a Globalfoundries fab in New York state are all running the 14nm process.
“The last couple of years have been transformative for the foundry business. We have brought competition back into the foundry industry,” Samsung's Hao said. “14nm node is going to be a game changer for us.”