The part will be a 36-layer 128Gbit NAND multilayer-cell (MLC) device. In addition the company said it would complete the design of a 48-layer triple-layer cell (TLC) in 2015 to be able to meet demand from the solid-state drive market in 2016. SK Hynix had announced a 24-layer NAND device as a prototype.Source: EE Times
The announcement was made as part of SK Hynix's reporting on its financial results for the second quarter of 2015. The company made a net income of 1.1 trillion won on revenue of 4.6 trillion won which was year-on-year by 18 percent.
SK Hynix kicks off 3D NAND flash production
Posted on Tuesday, Jul 28 2015 @ 14:30 CEST by Thomas De Maesschalck