Overall, the most important thing chip designers need to know is, “the [10nm] fin improves performance, but the back-end resistance does not improve [compared to 14nm], that’s the most challenging aspect of our 10nm finFET process,” said Taejoong Song, lead author of the Samsung SRAM paper in response to a question from a Synopsys engineer.
Back-end resistance will continue to increase through the 7nm node, Song said in a brief interview with EE Times before his presentation. “You expect with a new process everything gets better, but this is not the case,” he said.
Samsung shows 10nm FinFET SRAM, 38 percent shrink versus 14nm
Posted on Friday, Feb 05 2016 @ 12:02 CET by Thomas De Maesschalck
Samsung showed off a 128Mb SRAM chip made on its 10nm FinFET process at the International Solid-State Circuits Conference (ISSCC). The South Korean conglomerate said its 10nm SRAM is 38 percent smaller than a similar part made on its 14nm process. Samsung plans to offer 10nm FinFET mass production by the end of the year. Full details at EE Times.