Over at the Flash Memory Summit in Santa Clara, SK Hynix shared details about what it expects to deliver over the next decade. The company is currently getting its 128-layer 4D NAND into mass production and expects to ship this in the fourth quarter of this year. This should result in flash memory chips with a capacity of 1Tbit (125GB).
At the moment, SK Hynix engineers are working on NAND with 176-layers and NAND development manager Hangsok Choi said the company's roadmap includes NAND with up to 800 layers. He said that may take until 2030 or so.
The firm also showed the PE8000, a new PCI Express 4.0 x4 disk with dual-port support. This model achieves bandwidth of up to 6.4GB/s and up to 1 million IOPS. It will be offered in capacities of up to 64TB in 2.5" and U.2 versions.