Posted on Friday, April 17 2020 @ 14:13 CEST by Thomas De Maesschalck
The Electronic Times
picked up rumors that Samsung is developing 7th generation V-NAND flash memory technology that uses a double stacking technique to achieve 160 layers. At the moment, the highest number of layers used by any flash memory maker is 128.
Samsung Electronics is looking into applying “double-stack” technology to the 7th generation V-NAND flash memory. This technology creates holes in two separate times so that current can go through circuits.
Samsung Electronics has been using “single-stack” technology that creates holes all at once. It seems that Samsung Electronics is considering the “double-stack” technology due to an increase in the number of layers.
