Intel transistors to use nanoribbon technology within next five years

Posted on Tuesday, Jun 23 2020 @ 14:13 CEST by Thomas De Maesschalck
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Speaking at this year's international VLSI conference, Intel CTO Mike Mayberry revealed his company expects to have nanowire/nanoribbon transistors in high-volume production within the next five years. This is a form of a gate-all-around (GAA) transistor, which is the next big step since the introduction of FinFET. The GAA-type design offers space savings as well as power savings at a silicon level. Mayberry did not provide specifics about when Intel plans to adopt nanoribbon transistors, he said he wasn't giving a roadmap talk but he was willing to narrow it down to "within the next five years."
There were a few slides that might be worth covering in a future article, along with a few of the Q&A parts, however it was this question where Dr. Mayberry said a point worth reporting.

Q: Can you give us the timeline for the introduction of nanoribbon/nanowire process technology into high volume production?

A: This is not a roadmap talk, so I'll be vague and say within in the next five years.
INTC nanoribbon wire technology

About the Author

Thomas De Maesschalck

Thomas has been messing with computer since early childhood and firmly believes the Internet is the best thing since sliced bread. Enjoys playing with new tech, is fascinated by science, and passionate about financial markets. When not behind a computer, he can be found with running shoes on or lifting heavy weights in the weight room.

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