One of the big things about increasing capacity in memory is that you end up stacking more memory together. For their part, Samsung is stating that they can stack 8 DDR5 dies together and still be smaller than 4 dies of DDR4. This is achieved by thinning each die, but also new through-silicon-via connection topographies that allow for a reduced gap between dies of up to 40%. This is partnered by new cooling technologies between dies to assist with thermal performance.Samsung says it will start mass-producing 512GB DDR5 memory modules by the end of this year, but the company didn't mention the speed of the 512GB modules it will make this year.
Samsung foresees 512GB DDR5-7200
Posted on Monday, August 23 2021 @ 14:04 CEST by Thomas De Maesschalck