Hynix develops 512Mbit DDR using 0.10-micron technology

Posted on Wednesday, Oct 30 2002 @ 14:37 CET by Thomas De Maesschalck
Hynix Semiconductor announced that it has successfully developed 512Mbit DDR using 0.10-micron technology, reported the Korea Economic Daily.

According to the company, it saved 50% of the cost of upgrading to 0.10-micron technology by using existing equipment and has been able to increase output by more than 40% from the previous upgrade.

After producing 512Mbit using the 0.10-micron node by year-end, Hynix plans to enter 256Mbit DDR and 1Gbit DDR production using this technology.

This “Golden Chip” project, moving the company to 0.10-micron technology, succeeds the Blue Chip (upgrading from 0.18- to 0.15-micron) and Prime Chip projects (upgrading from 0.15- to 0.13-micron
Source : DigiTimes


About the Author

Thomas De Maesschalck

Thomas has been messing with computer since early childhood and firmly believes the Internet is the best thing since sliced bread. Enjoys playing with new tech, is fascinated by science, and passionate about financial markets. When not behind a computer, he can be found with running shoes on or lifting heavy weights in the weight room.



Loading Comments